Produsen: | Toshiba Semiconductor and Storage |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | TK8Q65W,S1Q |
Deskripsi: | MOSFET N-CH 650V 7.8A IPAK |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Toshiba Semiconductor and Storage |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | DTMOSIV |
FET jenis | N-Channel |
Kemasan | Tube |
VGS (maks) | ±30V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Through Hole |
Paket/kasus | TO-251-3 Stub Leads, IPak |
VGS (th) (maks) @ id | 3.5V @ 300µA |
Suhu operasi | 150°C (TJ) |
RDS pada (maks) @ id, VGS | 670mOhm @ 3.9A, 10V |
Disipasi daya (maks) | 80W (Tc) |
Paket perangkat supplier | I-PAK |
Gate charge (QG) (maks) @ VGS | 16nC @ 10V |
Tiriskan ke sumber tegangan (Vdss) | 650V |
Kapasitansi input (CISS) (maks) @ VDS | 570pF @ 300V |
Current-kontinu Drain (id) @ 25 ° c | 7.8A (Ta) |
Tegangan drive (RDS maks pada, min RDS on) | 10V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$1.56 | $1.53 | $1.50 |