Produsen: | Infineon Technologies |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | IPB180N04S4L01ATMA1 |
Deskripsi: | MOSFET N-CH TO263-7 |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Infineon Technologies |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | Automotive, AEC-Q101, OptiMOS™ |
FET jenis | N-Channel |
Kemasan | Tape & Reel (TR) |
VGS (maks) | +20V, -16V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Surface Mount |
Paket/kasus | TO-263-7, D²Pak (6 Leads + Tab) |
VGS (th) (maks) @ id | 2.2V @ 140µA |
Suhu operasi | -55°C ~ 175°C (TJ) |
RDS pada (maks) @ id, VGS | 1.2mOhm @ 100A, 10V |
Disipasi daya (maks) | 188W (Tc) |
Paket perangkat supplier | PG-TO263-7-3 |
Gate charge (QG) (maks) @ VGS | 245nC @ 10V |
Tiriskan ke sumber tegangan (Vdss) | 40V |
Kapasitansi input (CISS) (maks) @ VDS | 19100pF @ 25V |
Current-kontinu Drain (id) @ 25 ° c | 180A (Tc) |
Tegangan drive (RDS maks pada, min RDS on) | 4.5V, 10V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$1.56 | $1.53 | $1.50 |