Produsen: | Vishay / Siliconix |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | SI2312BDS-T1-E3 |
Deskripsi: | MOSFET N-CH 20V 3.9A SOT23-3 |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Vishay / Siliconix |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | TrenchFET® |
FET jenis | N-Channel |
Kemasan | Digi-Reel® |
VGS (maks) | ±8V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Surface Mount |
Paket/kasus | TO-236-3, SC-59, SOT-23-3 |
VGS (th) (maks) @ id | 850mV @ 250µA |
Suhu operasi | -55°C ~ 150°C (TJ) |
RDS pada (maks) @ id, VGS | 31mOhm @ 5A, 4.5V |
Disipasi daya (maks) | 750mW (Ta) |
Paket perangkat supplier | SOT-23-3 (TO-236) |
Gate charge (QG) (maks) @ VGS | 12nC @ 4.5V |
Tiriskan ke sumber tegangan (Vdss) | 20V |
Current-kontinu Drain (id) @ 25 ° c | 3.9A (Ta) |
Tegangan drive (RDS maks pada, min RDS on) | 1.8V, 4.5V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |