Produsen: | Vishay / Siliconix |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | IRFD024 |
Deskripsi: | MOSFET N-CH 60V 2.5A 4-DIP |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Vishay / Siliconix |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | - |
FET jenis | N-Channel |
Kemasan | Tube |
VGS (maks) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Through Hole |
Paket/kasus | 4-DIP (0.300", 7.62mm) |
VGS (th) (maks) @ id | 4V @ 250µA |
Suhu operasi | -55°C ~ 175°C (TJ) |
RDS pada (maks) @ id, VGS | 100mOhm @ 1.5A, 10V |
Disipasi daya (maks) | 1.3W (Ta) |
Paket perangkat supplier | 4-DIP, Hexdip, HVMDIP |
Gate charge (QG) (maks) @ VGS | 25nC @ 10V |
Tiriskan ke sumber tegangan (Vdss) | 60V |
Kapasitansi input (CISS) (maks) @ VDS | 640pF @ 25V |
Current-kontinu Drain (id) @ 25 ° c | 2.5A (Ta) |
Tegangan drive (RDS maks pada, min RDS on) | 10V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$1.74 | $1.71 | $1.67 |