Produsen: | Toshiba Semiconductor and Storage |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | TK35N65W,S1F |
Deskripsi: | MOSFET N-CH 650V 35A TO-247 |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Toshiba Semiconductor and Storage |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | DTMOSIV |
FET jenis | N-Channel |
Kemasan | Tube |
VGS (maks) | ±30V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Through Hole |
Paket/kasus | TO-247-3 |
VGS (th) (maks) @ id | 3.5V @ 2.1mA |
Suhu operasi | 150°C (TJ) |
RDS pada (maks) @ id, VGS | 80mOhm @ 17.5A, 10V |
Disipasi daya (maks) | 270W (Tc) |
Paket perangkat supplier | TO-247 |
Gate charge (QG) (maks) @ VGS | 100nC @ 10V |
Tiriskan ke sumber tegangan (Vdss) | 650V |
Kapasitansi input (CISS) (maks) @ VDS | 4100pF @ 300V |
Current-kontinu Drain (id) @ 25 ° c | 35A (Ta) |
Tegangan drive (RDS maks pada, min RDS on) | 10V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$6.81 | $6.67 | $6.54 |