Produsen: | Toshiba Semiconductor and Storage |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | SSM6J512NU,LF |
Deskripsi: | MOSFET P-CH 12V 10A UDFN6B |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Toshiba Semiconductor and Storage |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | U-MOSVII |
FET jenis | P-Channel |
Kemasan | Digi-Reel® |
VGS (maks) | ±10V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Surface Mount |
Paket/kasus | 6-WDFN Exposed Pad |
VGS (th) (maks) @ id | 1V @ 1mA |
Suhu operasi | 150°C (TJ) |
RDS pada (maks) @ id, VGS | 16.2mOhm @ 4A, 8V |
Disipasi daya (maks) | 1.25W (Ta) |
Paket perangkat supplier | 6-UDFNB (2x2) |
Gate charge (QG) (maks) @ VGS | 19.5nC @ 4.5V |
Tiriskan ke sumber tegangan (Vdss) | 12V |
Kapasitansi input (CISS) (maks) @ VDS | 1400pF @ 6V |
Current-kontinu Drain (id) @ 25 ° c | 10A (Ta) |
Tegangan drive (RDS maks pada, min RDS on) | 1.8V, 8V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |