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RN1103MFV(TPL3)
| Produsen: | Toshiba Semiconductor and Storage |
|---|---|
| Kategori Produk: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Lembar data: | RN1103MFV(TPL3) |
| Deskripsi: | TRANS PREBIAS NPN 150MW VESM |
| Status RoHS: | Sesuai RoHS |
| Atribut | Nilai atribut |
|---|---|
| Produsen | Toshiba Semiconductor and Storage |
| Kategori Produk | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Seri | - |
| Kemasan | Tape & Reel (TR) |
| Status bagian | Active |
| Daya-Max | 150mW |
| Jenis pemasangan | Surface Mount |
| Paket/kasus | SOT-723 |
| Tipe transistor | NPN - Pre-Biased |
| Nomor bagian dasar | RN110* |
| Resistor-Base (R1) | 22 kOhms |
| Paket perangkat supplier | VESM |
| Basis resistor-emitter (R2) | 22 kOhms |
| VCE Saturation (maks) @ IB, IC | 300mV @ 500µA, 5mA |
| Kolektor arus (IC) (maks) | 100mA |
| Kolektor cutoff saat ini (maks) | 500nA |
| Arus keuntungan DC (hFE) (min) @ IC, VCE | 70 @ 10mA, 5V |
| Tegangan-kolektor emitter Breakdown (maks) | 50V |
Dalam stok 0 pcs
| Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.04 | $0.04 | $0.04 |
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