Produsen: | STMicroelectronics |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | SCTWA50N120 |
Deskripsi: | MOSFET N-CH 1200V 65A HIP247 |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | STMicroelectronics |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | - |
FET jenis | N-Channel |
VGS (maks) | +25V, -10V |
Teknologi | SiCFET (Silicon Carbide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Through Hole |
Paket/kasus | TO-247-3 |
Nomor bagian dasar | SCTWA |
VGS (th) (maks) @ id | 3V @ 1mA |
Suhu operasi | -55°C ~ 200°C (TJ) |
RDS pada (maks) @ id, VGS | 69mOhm @ 40A, 20V |
Disipasi daya (maks) | 318W (Tc) |
Paket perangkat supplier | HiP247™ |
Gate charge (QG) (maks) @ VGS | 122nC @ 20V |
Tiriskan ke sumber tegangan (Vdss) | 1200V |
Kapasitansi input (CISS) (maks) @ VDS | 1900pF @ 400V |
Current-kontinu Drain (id) @ 25 ° c | 65A (Tc) |
Tegangan drive (RDS maks pada, min RDS on) | 20V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$35.32 | $34.61 | $33.92 |