Produsen: | ON Semiconductor |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | NTLJD3182FZTBG |
Deskripsi: | MOSFET P-CH 20V 2.2A 6-WDFN |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | ON Semiconductor |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | - |
FET jenis | P-Channel |
Kemasan | Tape & Reel (TR) |
VGS (maks) | ±8V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | Schottky Diode (Isolated) |
Status bagian | Obsolete |
Jenis pemasangan | Surface Mount |
Paket/kasus | 6-WDFN Exposed Pad |
VGS (th) (maks) @ id | 1V @ 250µA |
Suhu operasi | -55°C ~ 150°C (TJ) |
RDS pada (maks) @ id, VGS | 100mOhm @ 2A, 4.5V |
Disipasi daya (maks) | 710mW (Ta) |
Paket perangkat supplier | 6-WDFN (2x2) |
Gate charge (QG) (maks) @ VGS | 7.8nC @ 4.5V |
Tiriskan ke sumber tegangan (Vdss) | 20V |
Kapasitansi input (CISS) (maks) @ VDS | 450pF @ 10V |
Current-kontinu Drain (id) @ 25 ° c | 2.2A (Ta) |
Tegangan drive (RDS maks pada, min RDS on) | 1.8V, 4.5V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |