Produsen: | Microsemi Corporation |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | APT80SM120B |
Deskripsi: | POWER MOSFET - SIC |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Microsemi Corporation |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | - |
FET jenis | N-Channel |
Kemasan | Bulk |
VGS (maks) | +25V, -10V |
Teknologi | SiCFET (Silicon Carbide) |
FET fitur | - |
Status bagian | Obsolete |
Jenis pemasangan | Through Hole |
Paket/kasus | TO-247-3 |
VGS (th) (maks) @ id | 2.5V @ 1mA |
Suhu operasi | -55°C ~ 175°C (TJ) |
RDS pada (maks) @ id, VGS | 55mOhm @ 40A, 20V |
Disipasi daya (maks) | 555W (Tc) |
Paket perangkat supplier | TO-247 |
Gate charge (QG) (maks) @ VGS | 235nC @ 20V |
Tiriskan ke sumber tegangan (Vdss) | 1200V |
Current-kontinu Drain (id) @ 25 ° c | 80A (Tc) |
Tegangan drive (RDS maks pada, min RDS on) | 20V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |