Produsen: | Infineon Technologies |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | IRFR9N20DTRLPBF |
Deskripsi: | MOSFET N-CH 200V 9.4A DPAK |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Infineon Technologies |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | HEXFET® |
FET jenis | N-Channel |
Kemasan | Tape & Reel (TR) |
VGS (maks) | ±30V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Surface Mount |
Paket/kasus | TO-252-3, DPak (2 Leads + Tab), SC-63 |
VGS (th) (maks) @ id | 5.5V @ 250µA |
Suhu operasi | -55°C ~ 175°C (TJ) |
RDS pada (maks) @ id, VGS | 380mOhm @ 5.6A, 10V |
Disipasi daya (maks) | 86W (Tc) |
Paket perangkat supplier | D-Pak |
Gate charge (QG) (maks) @ VGS | 27nC @ 10V |
Tiriskan ke sumber tegangan (Vdss) | 200V |
Kapasitansi input (CISS) (maks) @ VDS | 560pF @ 25V |
Current-kontinu Drain (id) @ 25 ° c | 9.4A (Tc) |
Tegangan drive (RDS maks pada, min RDS on) | 10V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.44 | $0.43 | $0.42 |