Produsen: | Infineon Technologies |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | IRFHM8228TRPBF |
Deskripsi: | MOSFET N-CH 25V 19A 8PQFN |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Infineon Technologies |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | HEXFET® |
FET jenis | N-Channel |
Kemasan | Tape & Reel (TR) |
VGS (maks) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Last Time Buy |
Jenis pemasangan | Surface Mount |
Paket/kasus | 8-PowerTDFN |
VGS (th) (maks) @ id | 2.35V @ 25µA |
Suhu operasi | -55°C ~ 150°C (TJ) |
RDS pada (maks) @ id, VGS | 5.2mOhm @ 20A, 10V |
Disipasi daya (maks) | 2.8W (Ta), 34W (Tc) |
Paket perangkat supplier | 8-PQFN (3.3x3.3), Power33 |
Gate charge (QG) (maks) @ VGS | 18nC @ 10V |
Tiriskan ke sumber tegangan (Vdss) | 25V |
Kapasitansi input (CISS) (maks) @ VDS | 1667pF @ 10V |
Current-kontinu Drain (id) @ 25 ° c | 19A (Ta) |
Tegangan drive (RDS maks pada, min RDS on) | 4.5V, 10V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.31 | $0.30 | $0.30 |