Produsen: | Infineon Technologies |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | IPW65R110CFDFKSA2 |
Deskripsi: | HIGH POWER_LEGACY |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Infineon Technologies |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | CoolMOS™ CFD2 |
FET jenis | N-Channel |
Kemasan | Tube |
VGS (maks) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Through Hole |
Paket/kasus | TO-247-3 |
VGS (th) (maks) @ id | 4.5V @ 1.3mA |
Suhu operasi | -55°C ~ 150°C (TJ) |
RDS pada (maks) @ id, VGS | 110mOhm @ 12.7A, 10V |
Disipasi daya (maks) | 277.8W (Tc) |
Paket perangkat supplier | PG-TO247-3-41 |
Gate charge (QG) (maks) @ VGS | 118nC @ 10V |
Tiriskan ke sumber tegangan (Vdss) | 650V |
Kapasitansi input (CISS) (maks) @ VDS | 3240pF @ 100V |
Current-kontinu Drain (id) @ 25 ° c | 31.2A (Tc) |
Tegangan drive (RDS maks pada, min RDS on) | 10V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$4.55 | $4.46 | $4.37 |