Produsen: | Infineon Technologies |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | IPI600N25N3GAKSA1 |
Deskripsi: | MOSFET N-CH 250V 25A TO262-3 |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Infineon Technologies |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | OptiMOS™ |
FET jenis | N-Channel |
Kemasan | Tube |
VGS (maks) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Through Hole |
Paket/kasus | TO-262-3 Long Leads, I²Pak, TO-262AA |
VGS (th) (maks) @ id | 4V @ 90µA |
Suhu operasi | -55°C ~ 175°C (TJ) |
RDS pada (maks) @ id, VGS | 60mOhm @ 25A, 10V |
Disipasi daya (maks) | 136W (Tc) |
Paket perangkat supplier | PG-TO262-3 |
Gate charge (QG) (maks) @ VGS | 29nC @ 10V |
Tiriskan ke sumber tegangan (Vdss) | 250V |
Kapasitansi input (CISS) (maks) @ VDS | 2350pF @ 100V |
Current-kontinu Drain (id) @ 25 ° c | 25A (Tc) |
Tegangan drive (RDS maks pada, min RDS on) | 10V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$1.59 | $1.56 | $1.53 |