Produsen: | Infineon Technologies |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | IPD65R380E6ATMA1 |
Deskripsi: | MOSFET N-CH 650V 10.6A TO252 |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Infineon Technologies |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | CoolMOS™ E6 |
FET jenis | N-Channel |
Kemasan | Tape & Reel (TR) |
VGS (maks) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Not For New Designs |
Jenis pemasangan | Surface Mount |
Paket/kasus | TO-252-3, DPak (2 Leads + Tab), SC-63 |
VGS (th) (maks) @ id | 3.5V @ 320µA |
Suhu operasi | -55°C ~ 150°C (TJ) |
RDS pada (maks) @ id, VGS | 380mOhm @ 3.2A, 10V |
Disipasi daya (maks) | 83W (Tc) |
Paket perangkat supplier | PG-TO252-3 |
Gate charge (QG) (maks) @ VGS | 39nC @ 10V |
Tiriskan ke sumber tegangan (Vdss) | 650V |
Kapasitansi input (CISS) (maks) @ VDS | 710pF @ 100V |
Current-kontinu Drain (id) @ 25 ° c | 10.6A (Tc) |
Tegangan drive (RDS maks pada, min RDS on) | 10V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.78 | $0.76 | $0.75 |