Produsen: | Global Power Technologies Group |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | GP1M010A080H |
Deskripsi: | MOSFET N-CH 800V 9.5A TO220 |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Global Power Technologies Group |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | - |
FET jenis | N-Channel |
Kemasan | Tube |
VGS (maks) | ±30V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Obsolete |
Jenis pemasangan | Through Hole |
Paket/kasus | TO-220-3 |
VGS (th) (maks) @ id | 4V @ 250µA |
Suhu operasi | -55°C ~ 150°C (TJ) |
RDS pada (maks) @ id, VGS | 1.05Ohm @ 4.75A, 10V |
Disipasi daya (maks) | 290W (Tc) |
Paket perangkat supplier | TO-220 |
Gate charge (QG) (maks) @ VGS | 53nC @ 10V |
Tiriskan ke sumber tegangan (Vdss) | 800V |
Kapasitansi input (CISS) (maks) @ VDS | 2336pF @ 25V |
Current-kontinu Drain (id) @ 25 ° c | 9.5A (Tc) |
Tegangan drive (RDS maks pada, min RDS on) | 10V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |