Produsen: | EPC |
---|---|
Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | EPC2001C |
Deskripsi: | GANFET TRANS 100V 36A BUMPED DIE |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
---|---|
Produsen | EPC |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | eGaN® |
FET jenis | N-Channel |
Kemasan | Digi-Reel® |
VGS (maks) | +6V, -4V |
Teknologi | GaNFET (Gallium Nitride) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Surface Mount |
Paket/kasus | Die |
VGS (th) (maks) @ id | 2.5V @ 5mA |
Suhu operasi | -40°C ~ 150°C (TJ) |
RDS pada (maks) @ id, VGS | 7mOhm @ 25A, 5V |
Disipasi daya (maks) | - |
Paket perangkat supplier | Die Outline (11-Solder Bar) |
Gate charge (QG) (maks) @ VGS | 9nC @ 5V |
Tiriskan ke sumber tegangan (Vdss) | 100V |
Kapasitansi input (CISS) (maks) @ VDS | 900pF @ 50V |
Current-kontinu Drain (id) @ 25 ° c | 36A (Ta) |
Tegangan drive (RDS maks pada, min RDS on) | 5V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
---|---|---|---|
$0.00 | $0.00 | $0.00 |