Produsen: | Diodes Incorporated |
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Kategori Produk: | Transistors - FETs, MOSFETs - Single |
Lembar data: | DMG3415UFY4Q-7 |
Deskripsi: | MOSFET P-CH 16V 2.5A X2-DFN2015 |
Status RoHS: | Sesuai RoHS |
Atribut | Nilai atribut |
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Produsen | Diodes Incorporated |
Kategori Produk | Transistors - FETs, MOSFETs - Single |
Seri | - |
FET jenis | P-Channel |
Kemasan | Cut Tape (CT) |
VGS (maks) | ±8V |
Teknologi | MOSFET (Metal Oxide) |
FET fitur | - |
Status bagian | Active |
Jenis pemasangan | Surface Mount |
Paket/kasus | 3-XDFN |
VGS (th) (maks) @ id | 1V @ 250µA |
Suhu operasi | -55°C ~ 150°C (TJ) |
RDS pada (maks) @ id, VGS | 39mOhm @ 4A, 4.5V |
Disipasi daya (maks) | 650mW (Ta) |
Paket perangkat supplier | X2-DFN2015-3 |
Gate charge (QG) (maks) @ VGS | 10nC @ 4.5V |
Tiriskan ke sumber tegangan (Vdss) | 16V |
Kapasitansi input (CISS) (maks) @ VDS | 282pF @ 10V |
Current-kontinu Drain (id) @ 25 ° c | 2.5A (Ta) |
Tegangan drive (RDS maks pada, min RDS on) | 1.8V, 4.5V |
Harga refrence ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.39 | $0.38 | $0.37 |